Magnetic susceptor to baseplate seal

ABSTRACT

A reaction system for processing semiconductor substrates is disclosed. In particular, the invention discloses an arrangement of a susceptor and a baseplate for when a substrate is placed into a reaction region. Magnets are embedded into the susceptor and the baseplate in order to create a gap between the two. As a result of the gap, the invention prevents an accumulation of gaseous materials that would exist in prior art systems as well as particle generation due to physical contact between parts.

FIELD OF INVENTION

The present disclosure generally relates to semiconductor processingtools. More particularly, the disclosure relates to a wafer handlingmechanism comprising a susceptor and a baseplate.

BACKGROUND OF THE DISCLOSURE

Semiconductor processing typically involves fabrication of devices, suchas transistors, diodes, and integrated circuits, upon a thin piece ofsemiconductor material called a substrate. The semiconductor processingtakes place in a reaction region, where gases are passed over thesubstrate, resulting in a controlled deposit of material upon thesubstrate. The substrate is lifted into the reaction region by asusceptor.

A gap is formed between the susceptor and a baseplate of the reactionregion during processing. The purpose of the gap is to allow fluidcommunication between the inside of the reaction region and outside thesusceptor. With the gap, extraneous gas containing the reactive materialcan exit the reaction region. In addition, the gap is used to controlthe flow of gas into or out of the reaction region in a controlled anduniform manner.

In addition, the gap is necessary as direct physical contact between thesusceptor and the baseplate could result in particle generation. Thedirect physical contact results in the release of particles from eitherthe susceptor or the baseplate. Particle generation is problematic asthe smallest particles can contaminate and potentially cause defects inthe processed substrate.

A uniform gap between the susceptor and the baseplate has been desiredto avoid issues of particle generation. In addition, a uniform gap willkeep the gas flow into or out of a reactor chamber uniform around theentire seal. Prior art approaches to semiconductor processing haveutilized pads disposed between the susceptor and the baseplate in orderto maintain a uniform gap. The pads prevent direct physical contactbetween the susceptor and the baseplate. The height of the pads canrange between 0.001 inches (approximately 25 μm) and about 0.05 inches(approximately 1275 μm).

Over time, continued processing can lead to a deposit of reactivematerials on and around the pads of the susceptor. This depositionbuild-up can lead to the reduction in size of the gap between thesusceptor and the baseplate. Similar to the particle generation, adeposition build-up can cause issues of contamination and defects in theprocessed substrate. Thus, it is desired to have a uniform gap betweenthe susceptor and the baseplate arranged without the deposition build-upof reactive materials and the particle generation.

SUMMARY OF THE DISCLOSURE

Embodiments of the present disclosure relate to a reaction system forprocessing substrates including: a susceptor configured to hold asubstrate, a baseplate of a reaction region, at least one susceptormagnet, and at least one baseplate magnet. An interaction of the atleast one susceptor magnet and the at least one baseplate magnet createsa repelling force to maintain a gap between the susceptor and thebaseplate.

Embodiments of the present disclosure also relate to a reaction systemfor processing substrates including: a reaction region, a substrateloading region, a movement element, a reactant distribution system, abaseplate, a first susceptor magnet, and a first baseplate magnet. Aninteraction of the first susceptor magnet and the first baseplate magnetcreates a repelling force to maintain a gap between the susceptor andthe baseplate.

For purposes of summarizing the invention and the advantages achievedover the prior art, certain objects and advantages of the invention havebeen described herein above. Of course, it is to be understood that notnecessarily all such objects or advantages may be achieved in accordancewith any particular embodiment of the invention. Thus, for example,those skilled in the art will recognize that the invention may beembodied or carried out in a manner that achieves or optimizes oneadvantage or group of advantages as taught or suggested herein withoutnecessarily achieving other objects or advantages as may be taught orsuggested herein.

All of these embodiments are intended to be within the scope of theinvention herein disclosed. These and other embodiments will becomereadily apparent to those skilled in the art from the following detaileddescription of certain embodiments having reference to the attachedfigures, the invention not being limited to any particular embodiment(s)disclosed.

BRIEF DESCRIPTION OF THE DRAWING FIGURES

These and other features, aspects, and advantages of the inventiondisclosed herein are described below with reference to the drawings ofcertain embodiments, which are intended to illustrate and not to limitthe invention.

FIG. 1 schematically shows an embodiment of a reaction system includinga susceptor in a substrate loading position.

FIG. 2 schematically shows an elevation view of a susceptor and asubstrate.

FIG. 3 schematically shows an elevation view of a baseplate.

FIG. 4 schematically shows an embodiment of a reaction system includinga susceptor in a substrate processing position.

FIG. 5 schematically shows a zoomed view of a baseplate and a susceptorin a substrate processing position as shown in FIG. 4.

FIG. 6 schematically shows an embodiment of a reaction system includinga susceptor in a substrate loading position.

FIG. 7 schematically shows an elevation view of a susceptor and asubstrate.

FIG. 8 schematically shows an embodiment of a reaction system includinga susceptor in a substrate processing position.

FIG. 9 schematically shows a zoomed view of a baseplate and a susceptorin a substrate processing position as shown in FIG. 8.

FIG. 10 schematically shows an embodiment of a reaction system includinga susceptor in a substrate loading position.

FIG. 11 schematically shows an embodiment of a reaction system includinga susceptor in a substrate processing position.

FIG. 12 schematically shows a zoomed view of a baseplate and a susceptorin a substrate processing position as shown in FIG. 11.

FIG. 13 illustrates a reaction system in accordance with additionalexemplary embodiments of the disclosure.

FIG. 14 illustrates a portion of the reaction system of FIG. 13 ingreater detail.

It will be appreciated that elements in the figures are illustrated forsimplicity and clarity and have not necessarily been drawn to scale. Forexample, the dimensions of some of the elements in the figures may beexaggerated relative to other elements to help improve understanding ofillustrated embodiments of the present disclosure.

DETAILED DESCRIPTION OF EXEMPLARY EMBODIMENTS

Although certain embodiments and examples are disclosed below, it willbe understood by those in the art that the invention extends beyond thespecifically disclosed embodiments and/or uses of the invention andobvious modifications and equivalents thereof. Thus, it is intended thatthe scope of the invention disclosed should not be limited by theparticular disclosed embodiments described below.

The embodiments of this invention are directed to reaction systems thatare used to process substrates. The reaction systems include a susceptorfor holding a substrate. As used herein, a “substrate” refers to anymaterial having a surface onto which material can be deposited. Thereaction systems also include a reaction region defined in part by abaseplate. The susceptor will be loaded with the substrate and thenbring the substrate into the reaction region for processing. Duringprocessing, deposition of materials may take place on the substrate. Inembodiments of the invention, magnets may be used in both the susceptorand the baseplate in order to form a gap between the susceptor and thebaseplate. The gap allows for materials to pass out from the reactionregion. In addition, the gap allows for a uniform controlled flow of gasinto and out of the reaction region. The size of the gap can bemonitored through the use of force gauges to ensure a consistent andrepeatable gap.

Embodiments of this invention will allow an adjustment to the size ofthe gap without disassembling the reactor to change to different-sizedpads to either tune the process or to compensate for the change in thegap due to deposition of reactant materials. In addition, embodiments ofthis invention eliminate any physical contact between the pads and thebaseplate. Even though the pads take up a small area, the pads stillcontact the baseplate physically, resulting in particle generation.Finally, embodiments of this invention may allow continuous rotation ofthe susceptor during processing of the semiconductor substrate.

FIG. 1 illustrates a first embodiment of a reaction system 100 forprocessing substrates. The reaction system 100 includes a reactionregion 105 and a substrate loading region 110. A baseplate 115 separatesthe reaction region 105 from the substrate loading region 110. Thereaction region 105 is defined in part by a reaction region housing 120and a reactant distribution system 125. The substrate loading region 110is defined in part by a substrate loading housing 130.

The reactant distribution system 125 is responsible for providingmaterials that would be deposited upon the substrate. While the reactantdistribution system 125 is shown to be a showerhead distribution system,one of ordinary skill in the art would understand that the reactantdistribution system 125 can take another form as a cross-flowdistribution system. Such a cross-flow distribution system is disclosedin U.S. Pat. No. 8,216,380 to White et al, entitled GAP MAINTENANCE FOROPENING TO PROCESS CHAMBER, the contents of which are herebyincorporated by reference to the extent such content does not conflictwith the present disclosure.

As previously stated, a substrate 135 is loaded onto a susceptor 140.The susceptor 140 is able to move with the operation of a movementelement 145. Movement element 145 may be configured to move thesusceptor 140 and the substrate 135 up and down. As shown in FIG. 1, themovement element 145 has the susceptor 140 in a substrate loadingposition. The movement element 145 may also be configured to rotate thesusceptor 140 and the substrate 135. In addition, the susceptor 140 mayalso have a lift-pin 150 for loading and unloading the substrate 135from the susceptor 140. Such a movement element and a lift-pin aredisclosed in U.S. Pat. No. 8,216,380, the contents of which are herebyincorporated by reference to the extent such content does not conflictwith the present disclosure.

The susceptor 140 has several surfaces: a lower surface 140A, a radialsurface 140B, and an upper surface 140C. Within the lower surface 140Aof the susceptor 140, a susceptor magnet 160 is disposed. In acorresponding location on a lower surface 115A of the baseplate 115, abaseplate magnet 170 is disposed. The susceptor magnet 160 and thebaseplate magnet 170 will enable a gap to be formed between thesusceptor 140 and the baseplate 115.

FIG. 2 is a top elevation view of the substrate 135 loaded onto thesusceptor 140. The substrate 135 is loaded onto a portion of thesusceptor 140 defined by the upper surface 140C. As stated previously,the susceptor magnet 160 is disposed within the lower surface 140A ofthe susceptor 140. While the susceptor magnet 160 is illustrated as acircular ring, one of ordinary skill in the art would recognize that thesusceptor magnet 160 could be a series of magnets disposed along variouspoints in the lower surface 140A. For example, the susceptor magnet 160could be four separate magnets equally spaced apart.

FIG. 3 is an elevation view of the baseplate 115 of the reaction region105. The baseplate magnet 170 is embedded within the lower surface 115Aof the baseplate 115. Similar to the susceptor magnet 160, while thebaseplate magnet 170 is illustrated as a circular ring, one of ordinaryskill in the art would recognize that the baseplate magnet 170 could bea series of magnets disposed along various points in the lower surface115A. For example, the baseplate magnet 170 could be four separatemagnets equally spaced apart, each of which can correspond to fourseparate magnets equally spaced apart in the susceptor 140.

FIG. 4 illustrates the reaction system 100 shown in FIG. 1, where thesusceptor 140 is lifted from a substrate loading position in thesubstrate loading region 110 into a substrate processing position in thereaction region 105 by the movement element 145. The substrate 135 isnow within the reaction region 105, such that the reactant distributionsystem 125 can deposit material onto the substrate 135 in either ashowerhead or cross-flow arrangement.

FIG. 5 shows a zoomed view of FIG. 4. The susceptor magnet 160 isembedded within the susceptor 140 such that a positive pole (+) of thesusceptor magnet 160 can interact with a corresponding positive pole (+)of the baseplate magnet 170 embedded in the baseplate 115. Although itis illustrated that the positive poles of the two magnets interact, oneof ordinary skill in the art would understand that the susceptor magnet160 and the baseplate magnet 170 can be arranged so that their negativepoles can interact.

The repulsion between the two positive poles of the magnets results inthe creation of a gap 180. The gap 180 can range between 0.001 and 0.05inches. One of ordinary skill in the art will recognize that the size ofthe gap will depend on the strength of the magnets and the size and massof the reactor parts. The absence of pads within the gap 150 provides abenefit by preventing the deposition build-up of reactant materialswithin the gap 150. In addition, the absence of pads will eliminate allmechanical contact between the parts, potentially reducing theprobability of mechanical defect generation. As previously stated, thesize of the gap 150 may be monitored with the use of force gauges, forexample, using a monitoring system 190 including a force gauge 192.

The susceptor magnet 160 and the baseplate magnet 170 both must be ableto withstand the high temperatures and caustic chemicals in a reactionregion during the processing of the substrate 135. Temperatures withinthe reaction region 105 during processing can range between 150° C. and550° C. Samarium Cobalt magnets are capable of withstanding these hightemperatures as having an operable temperature range of 400° C. and 550°C. Neodymium may also be used as it has an operable temperature range of80° C. and 200° C. One of ordinary skill in the art can recognize thatother high temperature magnets could potentially be used.

FIG. 6 illustrates another embodiment of a reaction system 200 forprocessing substrates. The reaction system 200 includes a reactionregion 205 and a substrate loading region 210. A baseplate 215 separatesthe reaction region 205 from the substrate chamber 210. The reactionregion 205 is defined in part by a reaction region housing 220 and areactant distribution system 225. The reactant distribution system 225is responsible for providing materials that would be deposited upon thesubstrate. One of ordinary skill in the art would understand that thereactant distribution system 225, which is shown as a showerheadarrangement, can take another form as a cross-flow distribution system.The substrate loading region 210 is defined in part by a substrateloading housing 230.

As previously stated, a substrate 235 is loaded onto a susceptor 240.The susceptor 240 has several surfaces: a lower surface 240A, a radialsurface 240B, and an upper surface 240C. Susceptor 240 is able to movewith the operation of a movement element 245. The movement element 245may be configured to move the susceptor 240 and the substrate 235 up anddown. As shown in FIG. 6, the movement element 245 has the susceptor 240in a substrate loading position. Movement element 218 may also beconfigured to rotate the susceptor 240 and the substrate 235. Inaddition, the susceptor 240 may also have a lift-pin 250 for loading andunloading the substrate 235 from the susceptor 240. Such a movementelement and a lift-pin are disclosed in U.S. Pat. No. 8,216,380, thecontents of which are hereby incorporated by reference to the extentsuch content does not conflict with the present disclosure.

FIG. 7 illustrates a top elevation view of the susceptor 240. Within thelower surface 240A of the susceptor 240, a first susceptor magnet 260and a second susceptor magnet 265 are disposed. The upper surface 240Cof the susceptor 240 defines an area in which the substrate 235 sitsduring processing.

FIG. 8 illustrates the embodiment of FIG. 6 with the susceptor 240 in asubstrate processing position. A baseplate magnet 270 is disposed in alocation on a lower surface 215A of the baseplate 215. The location ofthe baseplate magnet 270 corresponds to the location of first susceptormagnet 260 and second susceptor magnet 265. The first susceptor magnet260, the second susceptor magnet 265, and the baseplate magnet 270 willenable a gap to be formed between the susceptor 240 and the baseplate215. While it is preferable that the first susceptor magnet 260, thesecond susceptor magnet 265, and the baseplate magnet 270 be in a ringshape, the invention is not limited and contemplates utilizing a seriesof magnets within the baseplate 215 and the susceptor 235.

As shown in FIG. 9, the baseplate magnet 270 is disposed in a locationsuch that it can interact with both the first susceptor magnet 260 andthe second susceptor magnet 265. The positive pole (+) of the baseplatemagnet 270 interacts with the positive poles (+) of the first and secondsusceptor magnets to create a repulsive force. The repulsive forceresults in the formation of a gap 280. The gap 250 can range between0.001 and 0.05 inches. The absence of pads within the gap 280 provides abenefit by preventing the deposition build-up of reactant materialswithin the gap 280. Furthermore, the absence of pads will eliminate allmechanical contact between the parts, potentially reducing theprobability of mechanical defect generation.

As illustrated, the baseplate magnet 270 can be located in between thefirst susceptor magnet 260 and the second susceptor magnet 265 such thatthe baseplate magnet 270 can interact equally with both susceptormagnets. However, the location of the baseplate magnet 270 is not solimited to be between the first susceptor magnet 260 and the secondsusceptor magnet 265. The location of the baseplate magnet 270 can varyin order to obtain a desired size for the gap 280. As previously stated,the size of the gap 280 may be monitored with the use of force gauges,as illustrated in connection with FIG. 1.

FIG. 10 illustrates another embodiment of another embodiment of areaction system 300 for processing substrates. The reaction system 300includes a reaction region 305 and a substrate loading region 310. Abaseplate 315 separates the reaction region 305 from the substratechamber 310. The reaction region 305 is defined in part by a reactionregion housing 320 and a reactant distribution system 325. The reactantdistribution system 325 is responsible for providing materials thatwould be deposited upon the substrate. One of ordinary skill in the artwould understand that the reactant distribution system 325, which isshown as a showerhead arrangement, can take another form as a cross-flowdistribution system. The substrate loading region 310 is defined in partby a substrate loading housing 330.

As previously stated, a substrate 335 is loaded onto a susceptor 340.The susceptor 340 has several surfaces: a lower surface 340A, a radialsurface 340B, and an upper surface 340C. Susceptor 340 is able to movewith the operation of a movement element 345. Movement element 345 maybe configured to move the susceptor 340 and the substrate 335 up anddown. As shown in FIG. 10, the movement element 345 has the susceptor340 in a substrate loading position. The movement element 345 may alsobe configured to rotate the susceptor 340 and the substrate 335. Inaddition, the susceptor 340 may also have a lift-pin 350 for loading andunloading the substrate 335 from the susceptor 340. Such a movementelement and a lift-pin are disclosed in U.S. Pat. No. 8,216,380, thecontents of which are hereby incorporated by reference to the extentsuch content does not conflict with the present disclosure.

FIG. 11 illustrates the embodiment of FIG. 10 with the susceptor 316 ina substrate processing position. Within the lower surface 340A of thesusceptor 340, a first susceptor magnet 360 is disposed. Within theradial surface 340B of the susceptor 340, a second susceptor magnet 365is disposed. The upper surface 340C of the susceptor 340 defines an areain which the substrate 335 sits during processing. A baseplate magnet370 is disposed in a location on a lower surface 315A of the baseplate315. The location of the baseplate magnet 340 corresponds to thelocation of first susceptor magnet 360 and second susceptor magnet 365.The first susceptor magnet 360, the second susceptor magnet 365, and thebaseplate magnet 370 will enable a gap to be formed between thesusceptor 340 and the baseplate 315. While it is preferable that thefirst susceptor magnet 360, the second susceptor magnet 365, and thebaseplate magnet 370 be in a ring shape, the invention is not limitedand contemplates utilizing a series of magnets within the baseplate 315and the susceptor 340.

As shown in FIG. 12, the baseplate magnet 370 is disposed in a locationsuch that it can interact with both the first susceptor magnet 360 andthe second susceptor magnet 365. The positive pole (+) of the baseplatemagnet 370 interacts with the positive pole (+) of the first susceptormagnet 360 to create a repulsive force. The repulsive force results inthe formation of a gap 380 between the lower surface 340A of thesusceptor 340 and the lower surface 315A of the baseplate 315. The gap380 can range between 0.001 and 0.05 inches. The absence of pads withinthe gap 380 provides a benefit by preventing the deposition build-up ofreactant materials within the gap 380. Furthermore, the absence of padswill eliminate all mechanical contact between the parts, potentiallyreducing the probability of mechanical defect generation.

At the same time, the negative pole (−) of the baseplate magnet 370interacts with the negative pole (−) of the second susceptor magnet 365to create a repulsive force. The repulsive force allows for centering ofthe susceptor 340 with respect to the baseplate 315 to maintain a gapbetween the radial surface 340B of the susceptor and a radial surface315B of the baseplate 315. A gap size is set by the diameter of thesusceptor relative to the diameter of the baseplate opening. In certainreactor chambers, the gap size can be approximately 1.5 mm.

FIG. 13 illustrates another embodiment of another embodiment of areaction system 400 for processing substrates. The reaction system 400includes a reaction region 405 and a substrate loading region 410. Abaseplate 415 separates the reaction region 405 from the substratechamber 410. The reaction region 405 is defined in part by a reactionregion housing 420 and a reactant distribution system 425. The reactantdistribution system 425 is responsible for providing materials thatwould be deposited upon the substrate. One of ordinary skill in the artwould understand that the reactant distribution system 425, which isshown as a showerhead arrangement, can take another form as a cross-flowdistribution system. The substrate loading region 410 is defined in partby a substrate loading housing 430.

As previously stated, a substrate 435 is loaded onto a susceptor 440.The susceptor 440 has several surfaces: a lower surface 440A, a radialsurface 440B, and an upper surface 440C. Susceptor 440 is able to movewith the operation of a movement element 445. Movement element 445 maybe configured to move the susceptor 440 and the substrate 435 up anddown. As shown in FIG. 13, the movement element 445 has the susceptor440 in a substrate processing position. The movement element 445 mayalso be configured to rotate the susceptor 440 and the substrate 435. Inaddition, the susceptor 440 may also have a lift-pin 450 for loading andunloading the substrate 435 from the susceptor 440. Such a movementelement and a lift-pin are disclosed in U.S. Pat. No. 8,216,380, thecontents of which are hereby incorporated by reference to the extentsuch content does not conflict with the present disclosure.

Within the lower surface 440A of the susceptor 440, a susceptor magnet460 is disposed. The upper surface 440C of the susceptor 440 defines anarea in which the substrate 435 sits during processing. A baseplatemagnet 470 is disposed in a location on a lower surface 415A of thebaseplate 415. The location of the baseplate magnet 440 corresponds tothe location of the susceptor magnet 460. The susceptor magnet 460 andthe baseplate magnet 470 will enable a gap to be formed between thesusceptor 440 and the baseplate 415. While it is preferable that thesusceptor magnet 460 and the baseplate magnet 470 be in a ring shape,the invention is not limited and contemplates utilizing a series ofmagnets within the baseplate 415 and the susceptor 440.

As shown in FIG. 14, the baseplate magnet 470 is disposed in a locationsuch that it can interact with the susceptor magnet 460. The orientationof the magnets is such that both the susceptor magnet 460 and thebaseplate magnet 470 are disposed at an angle. The positive pole (+) ofthe baseplate magnet 470 interacts with the positive pole (+) of thesusceptor magnet 460 to create a repulsive force. The repulsive forcecreates a gap 480 between the lower surface 440A of the susceptor 440and the lower surface 415A of the baseplate 415. The repulsive forcecreates a gap 485 between the radial surface 440B of the susceptor 440and the radial surface 415B of the baseplate 415. Both the gap 480 andthe gap 485 can range between 0.001 and 0.05 inches. The absence of padswithin the gaps provides a benefit by preventing the deposition build-upof reactant materials within the gaps. Furthermore, the absence of padswill eliminate all mechanical contact between the parts, potentiallyreducing the probability of mechanical defect generation.

The particular implementations shown and described are illustrative ofthe invention and its best mode and are not intended to otherwise limitthe scope of the aspects and implementations in any way. Indeed, for thesake of brevity, conventional manufacturing, connection, preparation,and other functional aspects of the system may not be described indetail. Furthermore, the connecting lines shown in the various figuresare intended to represent exemplary functional relationships and/orphysical couplings between the various elements.

Many alternative or additional functional relationship or physicalconnections may be present in the practical system, and/or may be absentin some embodiments.

It is to be understood that the configurations and/or approachesdescribed herein are exemplary in nature, and that these specificembodiments or examples are not to be considered in a limiting sense,because numerous variations are possible. The specific routines ormethods described herein may represent one or more of any number ofprocessing strategies. Thus, the various acts illustrated may beperformed in the sequence illustrated, in other sequences, or omitted insome cases.

The subject matter of the present disclosure includes all novel andnonobvious combinations and subcombinations of the various processes,systems, and configurations, and other features, functions, acts, and/orproperties disclosed herein, as well as any and all equivalents thereof.

What is claimed is:
 1. A reaction system for processing substratescomprising: a susceptor configured to hold a substrate to be processedin the reaction system, the susceptor comprising a susceptor uppersurface, a susceptor lower surface, and a susceptor radial surfacespanning between the susceptor upper surface and the susceptor lowersurface; a movement element to move the subsector from a substrateloading region to a reaction region of the reaction chamber; a baseplatethat separates the reaction region from a substrate loading region, thebaseplate comprising a baseplate upper surface, a baseplate lowersurface, and a baseplate radial surface there between; at least onesusceptor magnet embedded within the susceptor; and at least onebaseplate magnet embedded within the baseplate; wherein an interactionof the at least one susceptor magnet and the at least one baseplatemagnet creates a repelling force to maintain a gap defined as a spacebetween the susceptor and the baseplate and between the reaction regionand a loading region, and wherein the gap includes a space between thesusceptor radial surface and the baseplate radial surface, the reactionsystem further comprising a monitoring system comprising a force gauge,the at least one susceptor magnet, and the at least one baseplatemagnet, wherein the force gauge measures the repelling force, whereinthe monitoring system and the movement element are configured tomaintain a size of the gap between the susceptor and the baseplate,wherein a size of the gap can be adjusted to tune a process forprocessing the substrates.
 2. The reaction system of claim 1, whereinthe at least one susceptor magnet comprises at least one of thefollowing materials: Samarium Cobalt and Neodymium.
 3. The reactionsystem of claim 1, wherein the at least one susceptor magnet comprises amagnetic material able to withstand high temperatures.
 4. The reactionsystem of claim 1, wherein the at least one baseplate magnet comprisesat least one of the following materials: Samarium Cobalt and Neodymium.5. The reaction system of claim 1, wherein the at least one baseplatemagnet comprises a magnetic material able to withstand hightemperatures.
 6. The reaction system of claim 1, further comprising ashowerhead distribution system.
 7. The reaction system of claim 1,wherein the susceptor is configured to rotate continuously.
 8. Thereaction system of claim 1, wherein the at least one susceptor magnetcomprises two susceptor magnets spaced apart radially, and wherein thetwo susceptor magnets interact with the at least one baseplate magnet.9. The reaction system of claim 1, wherein the at least one susceptormagnet comprises a first susceptor magnet opposing a positive pole ofthe at least one baseplate magnet and a second susceptor magnet opposinga negative pole of the at least one baseplate magnet.
 10. The reactionsystem of claim 1, wherein the at least one susceptor magnet comprises aring magnet embedded within the susceptor.
 11. The reaction system ofclaim 8, wherein the two susceptor magnets comprise ring magnetsembedded within the susceptor.
 12. The reaction system of claim 1,wherein the at least one susceptor magnet and the at least one baseplatemagnet are disposed at a diagonal angle from the susceptor surface. 13.A reaction system for processing substrates comprising: a reactionregion; a substrate loading region; a susceptor configured to hold asubstrate; a movement element for moving the susceptor and the substratebetween the substrate loading region and the reaction region; ashowerhead distribution system within the reaction region for passing atleast one reactant over the substrate; a baseplate of the reactionregion, the baseplate interacting with the susceptor at a periphery ofthe susceptor; a first susceptor magnet embedded within the susceptor; afirst baseplate magnet embedded within the baseplate; wherein aninteraction of the first susceptor magnet and the first baseplate magnetgenerates a first repelling force to maintain a first gap between thesusceptor and the baseplate, and wherein the first gap and a second gapdefine a space between the baseplate and the susceptor and between thereaction region and the substrate loading region; and the reactionsystem further comprising a monitoring system comprising the firstsusceptor magnet and the first baseplate magnet, wherein the monitoringsystem is configured to monitor the first repelling force, wherein themonitoring system and the movement element are configured to maintain asize of the first gap and the second gap, wherein a size of the gap canbe adjusted to tune a process for processing the substrates.
 14. Thereaction system of claim 13, wherein the first susceptor magnet and thefirst baseplate magnet comprise at least one of the following materials:Samarium Cobalt and Neodymium.
 15. The reaction system of claim 13,further comprising a second susceptor magnet embedded within thesusceptor.
 16. The reaction system of claim 13, wherein an interactionof the second susceptor magnet and the first baseplate magnet generatesa second repelling force to maintain the second gap between thesusceptor and the baseplate.
 17. The reaction system of claim 13,wherein the first susceptor magnet and the first baseplate magnet aredisposed at a diagonal angle from a first susceptor surface.